Jump to main content
Jump to site search


Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Author affiliations

Abstract

Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed operation, the high density CMOS-compatible integration, and the high cycling endurance, the ReRAM technology is becoming a strong candidate for high-density storage arrays and novel in-memory computing systems. However, ReRAM suffers from cycle-to-cycle switching variability and noise-induced resistance fluctuations, leading to insufficient read margin between the programmed resistive states. To overcome the existing challenges, a deep understanding of the roles of the ReRAM materials in the device characteristics is essential. To better understand the role of the switching layer material in controlling ReRAM performance and reliability, this work compares SiOx- and HfO2-based ReRAM at fixed geometry and electrode materials. Ti/HfO2/C and Ti/SiOx/C devices are compared from the point of view of the forming process, switching characteristics, resistance variability, and temperature stability of the programmed states. The results show clear similarities for the two different oxides, including a similar resistance window and stability at high temperatures, thus suggesting a common nature of the switching mechanism, highlighting the importance of the electrodes. On the other hand, the oxide materials play a clear role in the forming, breakdown, and variability characteristics. The discrimination between the role of the oxide and the electrode materials in the ReRAM allows ReRAM optimization via materials engineering to be better explored for future memory and computing applications.

Graphical abstract: Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Back to tab navigation

Publication details

The article was received on 28 May 2018, accepted on 23 Jul 2018 and first published on 18 Sep 2018


Article type: Paper
DOI: 10.1039/C8FD00106E
Citation: Faraday Discuss., 2018, Advance Article
  • Open access: Creative Commons BY license
  •   Request permissions

    Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

    E. Ambrosi, A. Bricalli, M. Laudato and D. Ielmini, Faraday Discuss., 2018, Advance Article , DOI: 10.1039/C8FD00106E

    This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements