Jump to main content
Jump to site search


Tuning the electronic properties of van der Waals heterostructures composed of black phosphorus and graphitic SiC

Author affiliations

Abstract

This study presents a new van der Waals (vdW) heterostructure composed of monolayer black phosphorus (BP) and monolayer graphitic SiC (g-SiC). Using first-principles calculations, the structural and electronic properties of the BP/SiC heterostructure were investigated. It was found that by stacking BP with SiC, weak type-I band alignment can be achieved with a band gap of 0.705 eV, where the direct band gap as well as linear dichroism features were well preserved. The electrostatic potential drop in the heterojunction was calculated to be 4.044 eV. By applying perpendicular electric field, the band alignment can be altered to either type-I or type-II, and the band gap can be effectively controlled by field intensity, hence making the heterostructure suitable for various applications.

Graphical abstract: Tuning the electronic properties of van der Waals heterostructures composed of black phosphorus and graphitic SiC

Back to tab navigation

Publication details

The article was received on 03 Oct 2018, accepted on 01 Nov 2018 and first published on 02 Nov 2018


Article type: Paper
DOI: 10.1039/C8CP06170J
Citation: Phys. Chem. Chem. Phys., 2018, Advance Article
  •   Request permissions

    Tuning the electronic properties of van der Waals heterostructures composed of black phosphorus and graphitic SiC

    K. Tang, W. Qi, Y. Li and T. Wang, Phys. Chem. Chem. Phys., 2018, Advance Article , DOI: 10.1039/C8CP06170J

Search articles by author

Spotlight

Advertisements