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Issue 30, 2018
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Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

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Abstract

Two-dimensional surface structures often host a surface state in the bulk gap, which plays a crucial role in the surface electron transport. The diversity of in-gap surface states extends the category of two-dimensional systems and gives us more choices in material applications. In this article, we investigated the surface states of β-√3 × √3-Bi/Si(111) surface by scanning tunneling microscopy. Two nearly free electron states in the bulk gap of silicon were found in the unoccupied states. Combined with first-principles calculations, these two states were verified to be the Bi-contributed surface states and electron-accumulation-induced quantum well states. Due to the spin–orbit coupling of Bi atoms, Bi-contributed surface states exhibit free-electron Rashba splitting. The in-gap surface states with spin splitting can possibly be used for spin polarized electronics applications.

Graphical abstract: Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

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Publication details

The article was received on 01 Mar 2018, accepted on 06 Jul 2018 and first published on 06 Jul 2018


Article type: Paper
DOI: 10.1039/C8CP01356J
Citation: Phys. Chem. Chem. Phys., 2018,20, 20188-20193
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    Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

    J. Gou, L. Kong, W. Li, S. Sheng, H. Li, S. Meng, P. Cheng, K. Wu and L. Chen, Phys. Chem. Chem. Phys., 2018, 20, 20188
    DOI: 10.1039/C8CP01356J

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