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Single Crystal GaN Layer Converted From β-Ga2O3 Films and Its Application For Free-Standing GaN

Abstract

We have successfully obtained hexagonal single crystal GaN layer with (002) orientation by nitridating β-Ga2O3 film under NH3 flow despite structural mismatch between β-Ga2O3 and hexagonal GaN. The conversion process of β-Ga2O3 to GaN have also been systematically investigated. The nitridated GaN layer shows a network structure without obvious stress, very suitable to be used as template for epitaxial growth of high-quality GaN films. The GaN/Ga2O3 heterostructure can also be used for obtaining the free-standing GaN (FS-GaN) films by self-separation or chemical lift-off (CLO) process due to the selective etching of β-Ga2O3. A further investigation demonstrates the feasibility of in situ growth of low stress FS-GaN substrates by halide vapor phase epitaxy (HVPE).

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Publication details

The article was received on 09 Aug 2018, accepted on 27 Nov 2018 and first published on 28 Nov 2018


Article type: Paper
DOI: 10.1039/C8CE01336E
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Single Crystal GaN Layer Converted From β-Ga2O3 Films and Its Application For Free-Standing GaN

    Y. Li, X. Xiu, Z. Xiong, X. Hua, Z. Xie, P. Chen, B. Liu, T. Tao, R. Zhang and Y. Zheng, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE01336E

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