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Growth, defects, thermal and spectroscopic properties of Dy:GdScO3 and Dy,Tb:GdScO3 as promising 578 nm laser crystals

Abstract

Single crystals of Dy:GdScO3 and Dy,Tb:GdScO3 have been successfully grown by the Czochralski method. A high crystalline quality of both crystals is determined with X-ray rocking curves. Effective segregation coefficients of Dy3+ and Tb3+ ions in GdScO3 host are obtained to be ~0.7 and 1.03, respectively. The large FWHMs and absorption cross sections at 452 nm of Dy:GdScO3 and Dy,Tb:GdScO3 crystals indicate that they can be efficiently pumped by the commercial blue GaN laser diodes. Both Dy:GdScO3 and Dy,Tb:GdScO3 exhibit relatively large stimulated emission cross sections at 578 nm and relatively long fluorescence lifetimes, especially Dy,Tb:GdScO3 shows an enhanced yellow emission around 578 nm. The energy transfer between Dy3+ and Tb3+ ions is beneficial for realizing the population inversion by depopulating the population of the lower laser level of Dy3+ and has little influence on the upper laser level. Additionally, the defects and thermal properties of Dy:GdScO3 are investigated since they are very important for crystal growth and laser applications. All these results suggest that Dy:GdScO3 and Dy,Tb:GdScO3 can be regarded as promising candidates for realizing 578 nm laser output.

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Publication details

The article was received on 28 Jul 2018, accepted on 13 Sep 2018 and first published on 14 Sep 2018


Article type: Paper
DOI: 10.1039/C8CE01254G
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Growth, defects, thermal and spectroscopic properties of Dy:GdScO3 and Dy,Tb:GdScO3 as promising 578 nm laser crystals

    F. Peng, W. Liu, J. Luo, D. Sun, Y. Chen, H. Zhang, S. Ding and Q. Zhang, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE01254G

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