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Target stoichiometry and growth temperature impact on properties of BiVO4 (010) epitaxial thin films

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Abstract

The effects of target stoichiometry and growth conditions on the structure and properties of the monoclinic bismuth vanadate (BiVO4) (010) epitaxial films created using pulsed laser deposition were studied systematically. It is shown that phase-pure monoclinic BiVO4 epitaxial films were fabricated from a nonstoichiometric target with a bismuth/vanadium (Bi : V) ratio of 6 at 680 °C. The three-dimensional and adsorption-controlled growth process was confirmed using X-ray diffraction and atomic force microscopy. The valence states of Bi3+ and V5+ were determined from the results of X-ray photoelectron spectroscopy (XPS), indicating that the BiVO4 film has substantial stoichiometry. The results of the valence band XPS indicated that the Bi 6s energy level of the BiVO4 (010) film was located much deeper than that of the polycrystalline sample. The direct optical band gap of the BiVO4 film was found to be 2.59 eV. The photocatalytic oxidization activity of the single crystal BiVO4 film for rhodamine B degradation is about one order of magnitude higher in comparison with the polycrystalline sample, indicating that the nanostructured BiVO4 film is a promising material for obtaining better photocatalytic activity.

Graphical abstract: Target stoichiometry and growth temperature impact on properties of BiVO4 (010) epitaxial thin films

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Publication details

The article was received on 27 Jul 2018, accepted on 01 Oct 2018 and first published on 02 Oct 2018


Article type: Paper
DOI: 10.1039/C8CE01246F
Citation: CrystEngComm, 2018, Advance Article
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    Target stoichiometry and growth temperature impact on properties of BiVO4 (010) epitaxial thin films

    G. Li, S. Kou, F. Zhang, W. Zhang and H. Guo, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C8CE01246F

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