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Issue 40, 2018
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Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

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Abstract

The growth of GaN 3-D microstructures is investigated by SAG-HVPE. Capitalizing on the properties of this kinetically-controlled process, the main experimental parameters and physical mechanisms that control the shaping of 3D GaN prisms and pyramids in SAG-HVPE are highlighted. Growth experiments performed on N-polar AlN/Si(100) and Ga-polar GaN/Si(111) substrates also provide insight into how to switch from a pyramid to a prismatic shape for a given substrate polarity. The aspect ratio of GaN rods could be tuned by playing with the HCl partial pressure additionally introduced during growth. The influence of both mass transport and surface kinetics is discussed, as the crystal growth rate varies with increasing surface area as time goes by. Ammonia treatment prior to the growth, aimed at blocking the r planes thanks to H2 passivation, is proposed to tune the morphology of the GaN rods. Raman spectroscopy performed on individual GaN rods shows no relevant strain field and no structural differences between the rods and state-of-the-art bulk GaN.

Graphical abstract: Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

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Publication details

The article was received on 17 Jul 2018, accepted on 10 Sep 2018 and first published on 10 Sep 2018


Article type: Paper
DOI: 10.1039/C8CE01177J
Citation: CrystEngComm, 2018,20, 6207-6213
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    Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

    G. Avit, M. Zeghouane, Y. André, D. Castelluci, E. Gil, S. Baé, H. Amano and A. Trassoudaine, CrystEngComm, 2018, 20, 6207
    DOI: 10.1039/C8CE01177J

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