Jump to main content
Jump to site search


In situ removal of a native oxide layer from an amorphous silicon surface by UV laser for subsequent layer growth

Abstract

We have developed an in situ method for removing a native silicon oxide layer from an amorphous silicon (a-Si) surface using a UV laser. The a-Si film containing crystalline silicon seeds serves for the subsequent growth of crystalline Si layers by Steady-State Liquid Phase Epitaxy (SSLPE). The main goal of this technique is to grow crystalline silicon layers on low-cost glass substrates which can be used as absorber layers for thin film solar cells. We have investigated the interaction between a-Si and laser pulses as well as the growth results by scanning force microscopy (SFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and attenuated total reflectance Fourier-transform infrared spectroscopy (ATR-FTIR). The heating of the a-Si surface by a laser pulse is modelled by numerical simulations using a finite element approach in COMSOL-Multiphysics. The simulations verify that the laser pulse heats a-Si to temperatures sufficient for the thermal desorption of the native oxide layer but lower than both the crystallization temperature of a-Si and the glass transition temperature.

Back to tab navigation

Publication details

The article was received on 16 Jul 2018, accepted on 02 Oct 2018 and first published on 02 Oct 2018


Article type: Paper
DOI: 10.1039/C8CE01170B
Citation: CrystEngComm, 2018, Accepted Manuscript
  •   Request permissions

    In situ removal of a native oxide layer from an amorphous silicon surface by UV laser for subsequent layer growth

    C. Ehlers, S. Kayser, D. Uebel, R. Bansen, T. Markurt, T. Teubner, K. Hinrichs, O. Ernst and T. Boeck, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE01170B

Search articles by author

Spotlight

Advertisements