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Issue 40, 2018
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Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

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Abstract

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates. When the Ga2O3 films were directly grown on c-plane sapphire substrates, they tended to grow with a mixture of α-, β-, and ε-Ga2O3. However, with the insertion of a cubic NiO buffer layer, single-phase ε-Ga2O3 thin films were successfully grown at temperatures from 400 °C to 800 °C. Furthermore, ε-Ga2O3 thin films grown at 750 °C exhibited a smooth surface. Transmission electron microscopy observations revealed that the (111) plane-oriented NiO buffer layer prevented the growth of both polymorphs other than ε-Ga2O3 and the intermediate layers. The direct bandgap was estimated to be 4.9 eV in thin films in which ε-Ga2O3 was predominant and 5.3 eV in thin films dominated by α-Ga2O3.

Graphical abstract: Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

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Publication details

The article was received on 10 Jul 2018, accepted on 29 Aug 2018 and first published on 30 Aug 2018


Article type: Paper
DOI: 10.1039/C8CE01128A
Citation: CrystEngComm, 2018,20, 6236-6242
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    Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

    Y. Arata, H. Nishinaka, D. Tahara and M. Yoshimoto, CrystEngComm, 2018, 20, 6236
    DOI: 10.1039/C8CE01128A

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