Issue 40, 2018

Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

Abstract

Ferroelectric BaTiO3 films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that the BaTiO3 films' texture is selectable by the appropriate choice of Si wafer orientation and buffer layers. BaTiO3 films having (00l), (l0l) or (l0l)/(l00) texture present a very flat surface, low current leakage, and sizeable ferroelectric polarization. The films, integrated with silicon, offer opportunities to exploit the anisotropic optical and dielectric properties of ferroelectric BaTiO3.

Graphical abstract: Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

Article information

Article type
Paper
Submitted
04 Jul 2018
Accepted
12 Sep 2018
First published
12 Sep 2018

CrystEngComm, 2018,20, 6225-6229

Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

J. Lyu, I. Fina, R. Solanas, J. Fontcuberta and F. Sánchez, CrystEngComm, 2018, 20, 6225 DOI: 10.1039/C8CE01093E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements