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Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

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Abstract

Ferroelectric BaTiO3 films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that the BaTiO3 films' texture is selectable by the appropriate choice of Si wafer orientation and buffer layers. BaTiO3 films having (00l), (l0l) or (l0l)/(l00) texture present a very flat surface, low current leakage, and sizeable ferroelectric polarization. The films, integrated with silicon, offer opportunities to exploit the anisotropic optical and dielectric properties of ferroelectric BaTiO3.

Graphical abstract: Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

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Publication details

The article was received on 04 Jul 2018, accepted on 12 Sep 2018 and first published on 12 Sep 2018


Article type: Paper
DOI: 10.1039/C8CE01093E
Citation: CrystEngComm, 2018, Advance Article
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    Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon

    J. Lyu, I. Fina, R. Solanas, J. Fontcuberta and F. Sánchez, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C8CE01093E

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