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Switching isotropic and anisotropic graphene growth in a solid source CVD

Abstract

Controlling the isotropic and anisotropic graphene growth in a chemical vapor deposition (CVD) process is a critical aspect to understand the growth dynamics for synthesizing large-area single crystals. Here, we reveal the effect of gas flow and controllability on the isotropic and anisotropic graphene growth in a solid carbon source based atmospheric pressure CVD method. It was obtained that the growth rate of round-shaped crystals (isotropic growth) was much higher than that of hexagonal crystals (anisotropic growth). The average growth speed was increased from 0.276 µm/min to 1.89 µm/min with switching the hexagonal to circular domains growth in the CVD process. It was also found that there was no significant difference in the quality of graphene crystals while switching the growth from anisotropic to isotropic. The understanding of growth rate of round and hexagonal-shaped crystals can be critical to achieve faster growth of large single crystals. Again, the mixed edge structures (Armchair and Zigzag) in round-shaped graphene crystals without fixed orientation unlike hexagonal crystals provide the better chance of seamless merging. Our finding can be significant in understanding the isotropic and anisotropic graphene formation, their growth rate and quality to synthesize large-area single crystals.

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Publication details

The article was received on 29 May 2018, accepted on 31 Jul 2018 and first published on 01 Aug 2018


Article type: Paper
DOI: 10.1039/C8CE00886H
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Switching isotropic and anisotropic graphene growth in a solid source CVD

    B. Paudel Jaisi, K. P. Sharma, S. Sharma, R. D. Mahyavanshi, G. Kalita and M. Tanemura, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00886H

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