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Defects evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing

Abstract

AlN is the key material to obtain high performance ultraviolet optoelectronic and microelectronic devices. To obtain high quality AlN, high temperature annealing method is employed. However, the mechanism of thermal annealing on improving the quality of AlN quality needs to be further studied. In this work, we focus on the influence of high temperature thermal annealing on the defects evolution in AlN and study the mechanism. The AlN epilayers grown by metal-organic chemical vapor deposition (MOCVD) were annealed at different temperature. The results showed that the full width at half maximum of (0002) and (10-12) plane for AlN templates decreased to 147 and 246.8 arcsec after thermal annealing at 1750oC. Meanwhile many voids appeared in the physical vapor deposition AlN layer. To reveal the mechanism of thermal annealing on improving the quality of AlN, the AlN grown by physical vapor deposition (PVD) was also annealed by high temperature annealing. Atomic force microscope results showed that the realignment and coalescence occurred to the PVD-AlN, which gave the evidence for defects reduction in AlN by thermal annealing method as well as the existence of AlN voids. The results presented here can not only provide deeper understanding on the mechanism of the thermal annealing, but also offer direction to obtain high quality AlN templates.

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Publication details

The article was received on 11 May 2018, accepted on 09 Jul 2018 and first published on 09 Jul 2018


Article type: Paper
DOI: 10.1039/C8CE00770E
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Defects evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing

    J. Ben, X. Sun, Y. Jia, K. Jiang, Z. Shi, H. Liu, Y. Wang, C. Kai, Y. Wu and D. Li, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00770E

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