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A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study

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Abstract

A simple two-step hydrothermal method was used to successfully fabricate a well-grown β-Ga2O3 microrod array from GaOOH on a Si (100) substrate without other heterogeneous layers, to overcome the relatively large surface energy. Different hydrothermal conditions were used to investigate the growth mechanism of the β-Ga2O3/GaOOH microrod array on the silicon substrate. Most significantly, the key role of ethanol in the first-step hydrothermal solution is discussed in light of the change in the adsorption of growing nuclei at the solid–liquid interface.

Graphical abstract: A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study

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Publication details

The article was received on 25 Apr 2018, accepted on 29 Jun 2018 and first published on 30 Jun 2018


Article type: Paper
DOI: 10.1039/C8CE00658J
Citation: CrystEngComm, 2018, Advance Article
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    A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study

    J. Zhang, S. Jiao, Y. Wan, S. Gao, D. Wang and J. Wang, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C8CE00658J

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