Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 27th March 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 13, 2018
Previous Article Next Article

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Author affiliations

Abstract

Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

Graphical abstract: Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Back to tab navigation

Supplementary files

Publication details

The article was received on 14 Dec 2017, accepted on 05 Feb 2018 and first published on 15 Feb 2018


Article type: Communication
DOI: 10.1039/C7CE02162C
Citation: CrystEngComm, 2018,20, 1774-1778

  •   Request permissions

    Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

    K. Hasegawa, C. Takazawa, M. Fujita, S. Noda and M. Ihara, CrystEngComm, 2018, 20, 1774
    DOI: 10.1039/C7CE02162C

Search articles by author

Spotlight

Advertisements