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Issue 12, 2018
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Reactive chemical vapor deposition of heteroepitaxial Ti1−xAlxN films

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Abstract

Processing of Ti1−xAlxN thin films by the reactive chemical vapor deposition (R-CVD) technique has been performed from the reaction between a titanium tetrachloride (TiCl4–H2) gas mixture and (0001) c-plane monocrystalline aluminium nitride (AlN) films at high temperatures, in the 800–1200 °C range. As a typical result, the growth of epitaxial 70 nm thick layers of (111)-fcc Ti1−xAlxN (0.05 = x = 0.65) has been processed. Multicomponent mass transport and diffusion modelling is proposed to assess the experimental results. A good agreement is found between the experimental thickness of the transformed zones and the calculated titanium diffusion length in AlN. Fcc-Ti1−xAlxN phase formation can be regarded as a diffusion-controlled mechanism. The novel experimental methodology developed in this work could help in understanding the complex formation and stability of this technologically important material.

Graphical abstract: Reactive chemical vapor deposition of heteroepitaxial Ti1−xAlxN films

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Supplementary files

Article information


Submitted
08 Dec 2017
Accepted
12 Feb 2018
First published
12 Feb 2018

CrystEngComm, 2018,20, 1711-1715
Article type
Paper

Reactive chemical vapor deposition of heteroepitaxial Ti1−xAlxN films

F. Mercier, H. Shimoda, S. Lay, M. Pons and E. Blanquet, CrystEngComm, 2018, 20, 1711
DOI: 10.1039/C7CE02129A

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