Populating surface-trapped electrons towards SERS enhancement of W18O49 nanowires†
Abstract
The population of surface-trapped electrons is found to be in a close relationship with the SERS performance of a nanostructured W18O49 substrate, as proved by construction of metal–semiconductor interfaces or organic–semiconductor coordination. Therefore, further improvement in the SERS performance of semiconductors could be expected by populating the surface-trapped electrons.