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Issue 45, 2018
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Low temperature solution synthesis of silicon, germanium and Si–Ge axial heterostructures in nanorod and nanowire form

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Abstract

Herein, we report the formation of silicon, germanium and more complex Si–SixGe1−x and Si–Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

Graphical abstract: Low temperature solution synthesis of silicon, germanium and Si–Ge axial heterostructures in nanorod and nanowire form

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Supplementary files

Article information


Submitted
17 Apr 2018
Accepted
11 May 2018
First published
15 May 2018

Chem. Commun., 2018,54, 5728-5731
Article type
Communication

Low temperature solution synthesis of silicon, germanium and Si–Ge axial heterostructures in nanorod and nanowire form

G. Flynn, K. Stokes and K. M. Ryan, Chem. Commun., 2018, 54, 5728
DOI: 10.1039/C8CC03075H

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