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Issue 46, 2018
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Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

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Abstract

The synthesis and characterization of a novel, low cost, amorphous wide-bandgap semiconductor via X-ray induced decomposition of strontium oxalate at high pressure have been demonstrated. By means of IR spectroscopy, the final product is identified as a mixture of strontium carbonate, strontium oxalate and CO-derived materials. Band gap measurements demonstrate that the final product exhibits a much lower band gap (2.45 eV) than the initial strontium oxalate powder (4.07 eV), suggesting that the synthesized material can be highly useful in electronic and optical applications.

Graphical abstract: Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

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Supplementary files

Article information


Submitted
06 Sep 2018
Accepted
31 Oct 2018
First published
02 Nov 2018

J. Mater. Chem. C, 2018,6, 12473-12478
Article type
Communication
Author version available

Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

E. Evlyukhin, E. Kim, P. Cifligu, D. Goldberger, S. Schyck, B. Harris, S. Torres, G. R. Rossman and M. Pravica, J. Mater. Chem. C, 2018, 6, 12473
DOI: 10.1039/C8TC04496A

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