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Issue 36, 2018

Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistors

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Abstract

Monolayer organic field effect transistors (OFETs) provide opportunity for ultrahigh sensitivity gas sensor applications due to a strong dependence of OFET key parameters on the environment. However, an impressive combination of both high sensitivity and instantaneous response of such gas sensors can be achieved only on low-defect dense monolayers with high electrical performance. Herein, we investigated monolayer thin film formation of recently developed benzothieno[3,2-b][1]benzothiophene (BTBT) organosilicon dimer D2-Und-BTBT-Hex by Langmuir–Blodgett, Langmuir–Schaefer and spin-coating methods. For all these techniques, the conditions of uniform low-defect monolayer formation were found. These monolayers were used for preparation of OFET devices, which demonstrated excellent electrical performance with a hole mobility up to 7 × 10−2 cm2 V−1 s−1, a threshold voltage around 0 V and an on–off ratio of 105 as well as long-term stability of half-year storage under ambient conditions. Preliminary investigations demonstrated that the monolayer OFETs give an instantaneous response to ammonia at low concentrations (down to 400 ppb). These findings show a great potential of BTBT-based OFETs for large-area sensing device application.

Graphical abstract: Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistors

Supplementary files

Article information


Submitted
20 May 2018
Accepted
29 Jul 2018
First published
31 Jul 2018

J. Mater. Chem. C, 2018,6, 9649-9659
Article type
Paper

Organosilicon dimer of BTBT as a perspective semiconductor material for toxic gas detection with monolayer organic field-effect transistors

A. A. Trul, A. S. Sizov, V. P. Chekusova, O. V. Borshchev, E. V. Agina, M. A. Shcherbina, A. V. Bakirov, S. N. Chvalun and S. A. Ponomarenko, J. Mater. Chem. C, 2018, 6, 9649 DOI: 10.1039/C8TC02447B

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