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Issue 14, 2018
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Studies of spin related processes in fullerene C60 devices

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We have investigated spin related processes in fullerene C60 devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices. We found that the ‘curvature-related spin orbit coupling’ in C60 plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C60 diodes are dominated by the difference in the g-values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C60 spin-valve devices, where spin polarized holes are injected into the C60 interlayer. In addition, using the technique of spin-pumping in NiFe/C60/Pt trilayer devices with various C60 interlayer thicknesses we determined the spin diffusion length in C60 films to be 13 ± 2 nm at room temperature.

Graphical abstract: Studies of spin related processes in fullerene C60 devices

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The article was received on 08 Nov 2017, accepted on 14 Feb 2018 and first published on 14 Feb 2018

Article type: Paper
DOI: 10.1039/C7TC05086K
J. Mater. Chem. C, 2018,6, 3621-3627

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    Studies of spin related processes in fullerene C60 devices

    H. Liu, J. Wang, M. Groesbeck, X. Pan, C. Zhang and Z. V. Vardeny, J. Mater. Chem. C, 2018, 6, 3621
    DOI: 10.1039/C7TC05086K

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