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Issue 24, 2018
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Nanoengineering of the Cu2ZnSnS4–TiO2 interface via atomic layer deposition of Al2O3 for high sensitivity photodetectors and solid state solar cells

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Abstract

In this work, it is demonstrated that by applying a nanoscale Al2O3 film via atomic layer deposition (ALD) to the Cu2ZnSnS4–TiO2 p/n junction, the adverse Sn doping effect is prevented and band alignment is optimized. EDS f-ratio mapping and XANES are used to confirm the purity and nanoscale homogeneity of CZTS. Thanks to the engineered interface by ALD Al2O3, high sensitivity photodetectors are designed exhibiting a novel voltage alterable spectral photoresponse. By further integrating a CdS interfacial layer, a TiO2–Al2O3–CZTS/Spiro-OMeTAD/Au solid state nanostructured solar cell is eventually fabricated with an enhanced energy conversion efficiency of 4.2%.

Graphical abstract: Nanoengineering of the Cu2ZnSnS4–TiO2 interface via atomic layer deposition of Al2O3 for high sensitivity photodetectors and solid state solar cells

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Supplementary files

Article information


Submitted
30 Mar 2018
Accepted
20 May 2018
First published
21 May 2018

J. Mater. Chem. A, 2018,6, 11507-11520
Article type
Paper

Nanoengineering of the Cu2ZnSnS4–TiO2 interface via atomic layer deposition of Al2O3 for high sensitivity photodetectors and solid state solar cells

Z. Wang, N. Brodusch, R. Gauvin and G. P. Demopoulos, J. Mater. Chem. A, 2018, 6, 11507
DOI: 10.1039/C8TA02966K

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