Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Abstract

FTO–BiVO₄–W–WO₃ photoanode is fabricated in this study. A Z-scheme photocarrier transfer route can form in the composite photoanode and a photocurrent density of 5 mA cm⁻² under visible light (100 mW cm⁻²) can be achieved. In addition, a WO₃ layer covers the surface of BiVO₄, improving the stability of the photoelectrochemical performance.