Jump to main content
Jump to site search

Issue 52, 2018
Previous Article Next Article

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Author affiliations

Abstract

This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cryogenic conditions. Nanothin 3C-SiC films with a carrier concentration of 2 × 1019 cm−3 were epitaxially grown on a Si substrate using the LPCVD process, followed by photolithography and UV laser engraving processes to form SiC-on-Si pressure sensors. The magnitude of the piezoresistive effect was measured by monitoring the change of the SiC conductance subjected to pressurizing/depressurizing cycles at different temperatures. Experimental results showed a relatively stable piezoresistive effect in the highly doped 3C-SiC film with the gauge factor slightly increased by 20% at 150 K with respect to that at room temperature. The data was also in good agreement with theoretical analysis obtained based on the charge transfer phenomenon. This finding demonstrates the potential of 3C-SiC for MEMS sensors used in a large range of temperatures from cryogenic to high temperatures.

Graphical abstract: Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Back to tab navigation

Supplementary files

Article information


Submitted
07 Jul 2018
Accepted
18 Aug 2018
First published
24 Aug 2018

This article is Open Access

RSC Adv., 2018,8, 29976-29979
Article type
Paper

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

H. Phan, Karen M. Dowling, T. Nguyen, C. A. Chapin, T. Dinh, R. A. Miller, J. Han, A. Iacopi, D. G. Senesky, D. V. Dao and N. Nguyen, RSC Adv., 2018, 8, 29976
DOI: 10.1039/C8RA05797D

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

Reproduced material should be attributed as follows:

  • For reproduction of material from NJC:
    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
  • For reproduction of material from PCCP:
    [Original citation] - Published by the PCCP Owner Societies.
  • For reproduction of material from PPS:
    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
  • For reproduction of material from all other RSC journals:
    [Original citation] - Published by The Royal Society of Chemistry.

Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.


Social activity

Search articles by author

Spotlight

Advertisements