Issue 44, 2018, Issue in Progress

Oscillating Seebeck coefficients in π-stacked molecular junctions

Abstract

When a linear aromatic molecule within a nanogap is bound only to a source electrode, and an adjacent molecule is bound only to a drain electrode, the two molecules can interact via pi–pi stacking, which allows electrons to flow from the source to the drain, via pi–pi bonds. Here we investigate the thermoelectric properties of such junctions, using mono-thiol oligo-phenylene ethynylene (OPE3)-based molecules as a model system. For molecules which are para-connected to the electrodes, we show that the Seebeck coefficient is an oscillatory function of the length L of the pi–pi overlap region and exhibits large positive and negative values. This bi-thermoelectric behavior is a result of quantum interference within the junction, which behaves like a molecular-scale Mach–Zehnder interferometer. For junctions formed from molecular monolayers sandwiched between planar electrodes, this allows both hole-like and electron-like Seebeck coefficients to be realized, by careful control of electrode separation On the other hand for meta-connected molecules, the Seebeck coefficient is insensitive to L, which may be helpful in designing resilient junctions with more stable and predictable thermoelectric properties.

Graphical abstract: Oscillating Seebeck coefficients in π-stacked molecular junctions

Supplementary files

Article information

Article type
Paper
Submitted
01 Jun 2018
Accepted
28 Jun 2018
First published
10 Jul 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 24711-24715

Oscillating Seebeck coefficients in π-stacked molecular junctions

M. K. Al-Khaykanee, A. K. Ismael, I. Grace and C. J. Lambert, RSC Adv., 2018, 8, 24711 DOI: 10.1039/C8RA04698K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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