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Issue 6, 2018, Issue in Progress
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Highly sensitive p-type 4H-SiC van der Pauw sensor

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Abstract

This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices. The sensor was fabricated from a 4H-SiC (0001) wafer, using a 1 μm thick p-type epilayer with a concentration of 1018 cm−3. Taking advantage of the four-terminal configuration, the sensor can eliminate the need for resistance-to-voltage conversion which is typically required for two-terminal devices. The van der Pauw sensor also exhibits an excellent repeatability and linearity with a significantly large output voltage in induced strain ranging from 0 to 334 ppm. Various sensors aligned in different orientations were measured and a high sensitivity of 26.3 ppm−1 was obtained. Combining these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of 4H-SiC, the proposed sensor is promising for strain monitoring in harsh environments.

Graphical abstract: Highly sensitive p-type 4H-SiC van der Pauw sensor

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Article information


Submitted
30 Oct 2017
Accepted
08 Jan 2018
First published
15 Jan 2018

This article is Open Access

RSC Adv., 2018,8, 3009-3013
Article type
Paper

Highly sensitive p-type 4H-SiC van der Pauw sensor

T. Nguyen, H. Phan, J. Han, T. Dinh, A. R. Md Foisal, S. Dimitrijev, Y. Zhu, N. Nguyen and D. V. Dao, RSC Adv., 2018, 8, 3009
DOI: 10.1039/C7RA11922D

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    [Original citation] - Published by The Royal Society of Chemistry.

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