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Issue 41, 2018
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Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires

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Abstract

Metastable germanium–tin alloys are promising materials for optoelectronics and optics. Here we present the first electrical characterization of highly crystalline Ge0.81Sn0.19 nanowires grown in a solution-based process. The investigated Ge0.81Sn0.19 nanowires reveal ohmic behavior with resistivity of the nanowire material in the range of ∼1 × 10−4 Ω m. The temperature-dependent resistivity measurements demonstrate the semiconducting behavior. Moreover, failure of devices upon heating to moderate temperatures initiating material degradation has been investigated to illustrate that characterization and device operation of these highly metastable materials have to be carefully conducted.

Graphical abstract: Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires

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Supplementary files

Article information


Submitted
01 Jul 2018
Accepted
18 Sep 2018
First published
12 Oct 2018

This article is Open Access

Nanoscale, 2018,10, 19443-19449
Article type
Paper

Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires

M. Sistani, M. S. Seifner, M. G. Bartmann, J. Smoliner, A. Lugstein and S. Barth, Nanoscale, 2018, 10, 19443
DOI: 10.1039/C8NR05296D

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