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Issue 40, 2018
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Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors

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Graphene–silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10s–100s of kHz for wavelength λ >500 nm. Here, we demonstrate GS Schottky junction photodetectors fabricated on a silicon-on-insulator substrate (SOI) with response speeds approaching 1 GHz, attributed to the reduction of the photo-active silicon layer thickness to 10 μm and with it a suppression of speed-limiting diffusion currents. Graphene–silicon-on-insulator photodetectors (GSOI-PDs) exhibit a negligible influence of wavelength on response speed and only a modest compromise in responsivities compared to GS junctions fabricated on bulk silicon. Noise-equivalent-power (NEP) and specific detectivity (D*) of GSOI photodetectors are 14.5 pW and 7.83 × 1010 cm Hz1/2 W−1, respectively, in ambient conditions. We further demonstrate that combining GSOI-PDs with micro-optical elements formed by modifying the surface topography enables engineering of the spectral and angular response.

Graphical abstract: Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors

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Publication details

The article was received on 30 Jun 2018, accepted on 01 Oct 2018 and first published on 02 Oct 2018

Article type: Communication
DOI: 10.1039/C8NR05285A
Nanoscale, 2018,10, 18926-18935

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    Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors

    H. Selvi, E. W. Hill, P. Parkinson and T. J. Echtermeyer, Nanoscale, 2018, 10, 18926
    DOI: 10.1039/C8NR05285A

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