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Issue 37, 2018
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Giant resistive switching in mixed phase BiFeO3via phase population control

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Abstract

Highly-strained coherent interfaces, between rhombohedral-like (R) and tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R–T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 108%, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.

Graphical abstract: Giant resistive switching in mixed phase BiFeO3via phase population control

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Article information


Submitted
05 May 2018
Accepted
01 Sep 2018
First published
03 Sep 2018

This article is Open Access

Nanoscale, 2018,10, 17629-17637
Article type
Paper

Giant resistive switching in mixed phase BiFeO3via phase population control

D. Edwards, N. Browne, K. M. Holsgrove, A. B. Naden, S. O. Sayedghaee, B. Xu, S. Prosandeev, D. Wang, D. Mazumdar, M. Duchamp, A. Gupta, S. V. Kalinin, M. Arredondo, R. G. P. McQuaid, L. Bellaiche, J. M. Gregg and A. Kumar, Nanoscale, 2018, 10, 17629
DOI: 10.1039/C8NR03653E

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