Issue 2, 2018

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

Abstract

High-performances deep-ultraviolet (DUV) photodetectors (PDs) are highly desired due to their great importance in numerous fields. In this study, self-powered MoS2/GaN p–n heterojunction PDs were constructed, which exhibited high sensitivity to DUV light illumination and pronounced photovoltaic behaviours. Photoresponse analysis revealed a high responsivity of 187 mA W−1, a high specific detectivity of 2.34 × 1013 Jones, a high linear dynamic range of 97.3 dB and fast response speeds of 46.4/114.1 μs (5 kHz) under a DUV light of 265 nm at zero bias voltage without an external power supply. Moreover, the MoS2/GaN p–n heterojunction PD could operate with excellent stability and repeatability in a wide frequency range over 10 kHz. The high performance could be attributed to the enhancment by the built-in electric field in the heterojunction. It is expected that such high-performance self-powered DUV PDs will have great potential applications in the future.

Graphical abstract: High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

Article information

Article type
Paper
Submitted
18 Oct 2017
Accepted
01 Dec 2017
First published
04 Dec 2017

J. Mater. Chem. C, 2018,6, 299-303

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

R. Zhuo, Y. Wang, D. Wu, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li, J. Mater. Chem. C, 2018, 6, 299 DOI: 10.1039/C7TC04754A

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