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Issue 35, 2017
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Electronic structures and band alignments of monolayer metal trihalide semiconductors MX3

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Abstract

A series of new two-dimensional (2D) materials, metal trihalides MX3 (ScCl3, ScBr3, ScI3, YBr3, YI3, AsI3, SbI3, BiI3), have been explored by first-principles calculations. The relatively small cleavage energies compared with that of graphite indicate that monolayers of MX3 can be easily exfoliated from their layered bulk materials. Through electronic structure calculations, we find that monolayer metal trihalides are semiconductors with band gaps ranging from 2.82 eV (SbI3) to 5.47 eV (YBr3). Besides, the monolayers of AsI3, SbI3, and BiI3 display smaller electron effective mass, implying possibly larger electron mobility of these monolayers. Their band edges and band alignments have also been investigated for application in electronic devices. Our findings will expand the frontiers of new 2D materials and new applications for further research.

Graphical abstract: Electronic structures and band alignments of monolayer metal trihalide semiconductors MX3

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Supplementary files

Article information


Submitted
05 Jul 2017
Accepted
15 Aug 2017
First published
15 Aug 2017

J. Mater. Chem. C, 2017,5, 9066-9071
Article type
Paper

Electronic structures and band alignments of monolayer metal trihalide semiconductors MX3

P. Liu, F. Lu, M. Wu, X. Luo, Y. Cheng, X. Wang, W. Wang, W. Wang, H. Liu and K. Cho, J. Mater. Chem. C, 2017, 5, 9066
DOI: 10.1039/C7TC03003G

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