Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 35, 2017
Previous Article Next Article

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

Author affiliations

Abstract

We report all solution-processed manufacture of high performance top-emitting (TE) quantum dot light-emitting diodes (QLEDs) with an aluminum (Al) film as bottom electrode and a homogeneous molybdenum oxide (MoO3) film as hole injection layer deposited on top of Al from water solution. With an optimal organic light outcoupling layer over the top electrode to depress the multiple light beam interference effect, the QLEDs show a maximum luminance and current efficiency of 151 000 cd m−2 and 33.7 cd A−1, respectively, attaining a nearly Lambertian light source. Especially, they exhibit a maximum external quantum efficiency of 7.4%. All solution-processed fabrication of these TE QLEDs is further implemented on some active light display samples of Arabic numerals with 15 × 15 mm2 active area. The resulting simple passive matrix quantum dot light emitting displays possess excellent photoelectric characteristics, which represents a step toward practical application.

Graphical abstract: High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

Back to tab navigation

Supplementary files

Article information


Submitted
28 Jun 2017
Accepted
15 Aug 2017
First published
16 Aug 2017

J. Mater. Chem. C, 2017,5, 9138-9145
Article type
Paper

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

Z. Tang, J. Lin, L. Wang, Y. Lv, Y. Hu, Y. Fan, X. Guo, J. Zhao, Y. Wang and X. Liu, J. Mater. Chem. C, 2017, 5, 9138
DOI: 10.1039/C7TC02897K

Social activity

Search articles by author

Spotlight

Advertisements