Jump to main content
Jump to site search

Issue 25, 2017
Previous Article Next Article

Raman spectroscopy and microscopy of electrochemically and chemically doped high-mobility semiconducting polymers

Author affiliations

Abstract

The polaronic nature of two high-mobility hole-conducting polymers (PBTTT and DPPT-TT) is investigated by Raman spectroscopy and density functional theory (DFT) calculations. Chemical and electrochemical hole doping of these polymers leads to characteristic changes in the intensity ratios of the Raman active C[double bond, length as m-dash]C stretching modes but no significant frequency shifts. The data indicate a localization of positive polarons on the electron-rich thienothiophene cores that are present in both polymers. DFT calculations show that the Raman intensity ratio variations are most likely caused by the local electric field that originates from negatively charged dopant molecules or electrolyte anions and the positive polaron on the polymer chain. The characteristic changes in the Raman mode intensity ratios with the degree of doping enable in situ mapping of charge carrier concentration in the channel of electrolyte-gated polymer transistors with high spatial resolution.

Graphical abstract: Raman spectroscopy and microscopy of electrochemically and chemically doped high-mobility semiconducting polymers

Back to tab navigation

Supplementary files

Article information


Submitted
25 Mar 2017
Accepted
19 May 2017
First published
22 May 2017

J. Mater. Chem. C, 2017,5, 6176-6184
Article type
Paper

Raman spectroscopy and microscopy of electrochemically and chemically doped high-mobility semiconducting polymers

C. Francis, D. Fazzi, S. B. Grimm, F. Paulus, S. Beck, S. Hillebrandt, A. Pucci and J. Zaumseil, J. Mater. Chem. C, 2017, 5, 6176
DOI: 10.1039/C7TC01277B

Social activity

Search articles by author

Spotlight

Advertisements