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Issue 11, 2017
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Solution synthesis of few-layer 2H MX2 (M = Mo, W; X = S, Se)

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Abstract

Two-dimensional transition metal dichalcogenides (TMDs) exhibit a wide range of properties depending on the chemistry of the transition metal element and the chalcogen, making them promising candidates for electronic applications. Current TMD thin films are either derived from bulk minerals, hence limited by the impurities, defects, and the availability of raw materials, or deposited using high vacuum or high reaction temperature processes. Here, we describe a versatile method to directly synthesize few-layer 2H MoS2, MoSe2, WS2, and WSe2 flakes from thermolysis of organometallic precursors in the presence of a chalcogen element using microwave-assisted heating. We study how the concentration of a reducing agent, 1,2-hexadecanediol, affects the chemical composition of TMDs using X-ray photoelectron spectroscopy (XPS). The crystalline phase of these materials is determined as trigonal prismatic (2H) using Raman spectroscopy and scanning transmission electron microscopy (STEM). Both STEM and atomic force microscopy (AFM) indicate that these flakes are a few layers thick (∼2 nm) with a relatively large lateral size (∼2 μm).

Graphical abstract: Solution synthesis of few-layer 2H MX2 (M = Mo, W; X = S, Se)

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Supplementary files

Article information


Submitted
23 Nov 2016
Accepted
18 Feb 2017
First published
20 Feb 2017

J. Mater. Chem. C, 2017,5, 2859-2864
Article type
Paper

Solution synthesis of few-layer 2H MX2 (M = Mo, W; X = S, Se)

D. Barrera, Q. Wang, Y. Lee, L. Cheng, M. J. Kim, J. Kim and J. W. P. Hsu, J. Mater. Chem. C, 2017, 5, 2859
DOI: 10.1039/C6TC05097B

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