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Issue 1, 2017
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The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

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Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 Vāˆ’1 sāˆ’1.

Graphical abstract: The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

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Publication details

The article was received on 10 Nov 2016, accepted on 06 Dec 2016 and first published on 15 Dec 2016


Article type: Communication
DOI: 10.1039/C6TC04907A
Citation: J. Mater. Chem. C, 2017,5, 59-64
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    The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

    K. Tetzner, I. Isakov, A. Regoutz, D. J. Payne and T. D. Anthopoulos, J. Mater. Chem. C, 2017, 5, 59
    DOI: 10.1039/C6TC04907A

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