Jump to main content
Jump to site search

Issue 7, 2017
Previous Article Next Article

Strong carrier localization in 3d transition metal oxynitride LaVO3−xNx epitaxial thin films

Author affiliations

Abstract

Perovskite LaVO3 is a typical Mott insulator that exhibits insulator to metal transition by hole doping via substitution of an alkali earth element for La (La1–xSrxVO3 or La1−xCaxVO3). In this study, we investigated the electrical transport properties of its anion-substituted counterpart, LaVO3−xNx (0 ≤ x ≤ 0.71). LaVO3−xNx epitaxial thin films with high crystallinities and smooth surfaces were grown by plasma-assisted pulsed laser deposition. The electrical resistivity (ρ) of the thin films was remarkably lower than previously reported values for bulk polycrystals of LaVO3−xNx, indicating a suppressed contribution of the resistive grain boundaries to ρ in the present films. Plots of ρ against temperature for the LaVO3−xNx thin films showed that they were insulating (dρ/dT < 0) even at the highest doping level (x = 0.71), which is much larger than the threshold values for insulator to metal transition in La1−xSrxVO3 (x = 0.18) and La1−xCaxVO3 (x = 0.3). The curves of ρ against temperature were well described using the Efros–Shklovskii-like variable range hopping model, suggesting that random potential introduced by N substitution in the VX6 conduction path induces strong carrier localization in LaVO3−xNx.

Graphical abstract: Strong carrier localization in 3d transition metal oxynitride LaVO3−xNx epitaxial thin films

Back to tab navigation

Supplementary files

Article information


Submitted
24 Sep 2016
Accepted
25 Jan 2017
First published
03 Feb 2017

J. Mater. Chem. C, 2017,5, 1798-1802
Article type
Paper

Strong carrier localization in 3d transition metal oxynitride LaVO3−xNx epitaxial thin films

M. Sano, Y. Hirose, S. Nakao and T. Hasegawa, J. Mater. Chem. C, 2017, 5, 1798
DOI: 10.1039/C6TC04160D

Social activity

Search articles by author

Spotlight

Advertisements