Issue 2, 2018
From the journal:

Journal of Materials Chemistry A

Activation of the MoSe2 basal plane and Se-edge by B doping for enhanced hydrogen evolution†

Daqiang Gao, ORCID logo *ab   Baorui Xia,a   Changrong Zhu, ORCID logo *b   Yonghua Du,c   Pinxian Xi, ORCID logo d   Desheng Xue,a   Jun Ding ORCID logo *b  and  John Wangb  

* Corresponding authors

a Key Laboratory for Magnetism and Magnetic Materials of MOE, Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University, Lanzhou 730000, P. R. China
E-mail: gaodq@lzu.edu.cn

b Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore
E-mail: msezhuc@nus.edu.sg, msedingj@nus.edu.sg

c Institute of Chemical and Engineering Sciences, A*STAR, 1 Pesek Road, Jurong Island, Singapore

d Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province, The Research Center of Biomedical Nanotechnology, Lanzhou University, Lanzhou, P. R. China

Abstract

We demonstrate by both calculation and experiments the effective B doping-induced activation of both the basal plane and Se-edge in vertically aligned MoSe2 flakes, and the disruptive enhancement in the electrocatalytic hydrogen evolution reaction. The B doping boosts drastically the catalytic activity of MoSe2 for the hydrogen evolution reaction compared to the undoped one, characterized by a low overpotential (84 mV) and Tafel slope (39 mV s−1), which are comparable to those of the best Pt/C electrode. The realization of activation for both the basal plane and Se-edge by B doping in MoSe2 shows an innovative pathway towards the activity enhancement of TMDs for electrocatalysts and energy storage.

Graphical abstract: Activation of the MoSe2 basal plane and Se-edge by B doping for enhanced hydrogen evolution

About
Cited by
Related
Download options Please wait...

Supplementary files

Article information

DOI
https://doi.org/10.1039/C7TA09982G
Article type
Paper
Submitted
13 Nov 2017
Accepted
04 Dec 2017
First published
04 Dec 2017

J. Mater. Chem. A, 2018,6, 510-515

Permissions

Request permissions

Activation of the MoSe2 basal plane and Se-edge by B doping for enhanced hydrogen evolution

D. Gao, B. Xia, C. Zhu, Y. Du, P. Xi, D. Xue, J. Ding and J. Wang, J. Mater. Chem. A, 2018, 6, 510 DOI: 10.1039/C7TA09982G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements