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Issue 8, 2017
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Inducing swift nucleation morphology control for efficient planar perovskite solar cells by hot-air quenching

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Abstract

We introduce 1 step pin-hole free CH3NH3PbI3−xClx perovskite layers by using heated airflow during the nucleation stage of the perovskite. Upon employing heated air, we stimulate uniformly distributed nuclei growth, resulting in a pin-hole free planar perovskite layer. We find an optimized heated airflow of 100 °C as the optimized condition. The resulting planar device employing a conventional TiO2 electron transporting layer exhibits 17.6% average power conversion efficiency with 14.3% maximum powerpoint (MPP) efficiency. In addition, our method gives a very reproducible perovskite layer. Thus, our pin-hole free perovskite layer allows for 14.9% efficiency in a larger area device (0.71 cm2) that is generally prone to shunting paths.

Graphical abstract: Inducing swift nucleation morphology control for efficient planar perovskite solar cells by hot-air quenching

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Supplementary files

Article information


Submitted
18 Oct 2016
Accepted
16 Nov 2016
First published
16 Nov 2016

J. Mater. Chem. A, 2017,5, 3812-3818
Article type
Paper

Inducing swift nucleation morphology control for efficient planar perovskite solar cells by hot-air quenching

S. Song, M. T. Hörantner, K. Choi, H. J. Snaith and T. Park, J. Mater. Chem. A, 2017, 5, 3812
DOI: 10.1039/C6TA09020F

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