Issue 74, 2017, Issue in Progress

Intercalating copper into layered TaS2 van der Waals gaps

Abstract

Since graphene was successfully exfoliated, intercalation has been reviewed from bulk materials to two-dimensional counterparts. Here 1T phase Cu–TaS2 was successfully prepared via intercalating Cu into 2D layered TaS2 based on a solution method, which cannot damage the crystal structure of the target material and can realize uniform intercalation with a large amount of dopants. The electrical conductivity of 2D TaS2 intercalated by Cu has an obvious increase compared with 2D TaS2. Considering the peculiar metal–insulator transitions (MITs) of TaS2, our work may provide new opportunities for future superconductor and CDW-based memory devices.

Graphical abstract: Intercalating copper into layered TaS2 van der Waals gaps

Article information

Article type
Paper
Submitted
04 Aug 2017
Accepted
27 Sep 2017
First published
03 Oct 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 46699-46703

Intercalating copper into layered TaS2 van der Waals gaps

R. Liu, C. Wang, Y. Li, Y. Xie, Q. Chen, Z. Chen and Q. Liu, RSC Adv., 2017, 7, 46699 DOI: 10.1039/C7RA08630J

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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