Encapsulation of transition metal dichalcogenides crystals with room temperature plasma deposited carbonaceous films

Abstract

Encapsulation and its effect on two-dimensional (2D) dichalcogenides layered materials are of significant importance for electronic device fabrication. Here, we developed a dry and rapid encapsulation method for the 2D dichalcogenides by coating a carbonaceous film at room temperature using a plasma technique. Thin encapsulation film is coated on dichalcogenide crystals by microwave assisted surface wave plasma (MW-SWP) chemical vapor deposition (CVD) within a very short duration. Photoluminescence (PL) analysis shows the influence on excitation as well as the emission light with the coating of a carbonaceous film. The encapsulated dichalcogenide samples remain intact after heating at 200 °C as observed by PL and microscopic analysis. We also demonstrate obtaining stable photoconductivity for the dichalcogenide layers with encapsulation of a carbonaceous film. The rapid and dry coating technique at room temperature can be extended to various other 2D materials as the MW-SWP process allows damage-free encapsulation.