Damage and recovery induced by a high energy e-beam in a silicon nanofilm

Abstract

Herein, electron beam-induced damage and recovery of a silicon thin film was investigated in situ via transmission electron microscopy (TEM). Via only controlling the electron beam flux, the damage and recovery processes could be controlled under electron beam irradiation at ambient temperature with an energy of 200 keV. Above the threshold value of the flux, the crystalline phase was transformed into an amorphous state, even formed a hole. The damage process became more pronounced with the increasing electron flux. Under this threshold value, the reverse process, including hole recovery and recrystallization, can be achieved. The effects of flux and the mechanisms regarding these phenomena have been proposed. This study can provide insights into the shaping of materials and control of their structure through high energy beam engineering.