van der Waals epitaxy of large-area continuous ReS2 films on mica substrate†
Rhenium disulfide (ReS2) has attracted scientists' attention for its unique physical properties and potential applications in high-efficiency photodetector devices. Although lots of works have been done to obtain high-quality ReS2 nanoflakes, in-plane uniform growth is still challenging due to its unique decoupling property between layers. In this work, we successfully realized the epitaxial growth of continuous monolayer ReS2 films on mica substrate by chemical vapour deposition (CVD). By prolonging the growth time, continuous multilayer ReS2 films can also be obtained. The growth mechanism of ReS2 films is proposed based on Stranski–Krastanov theory. Filed effect transistors (FETs) based on multilayer ReS2 films exhibit typical n-type semiconducting behaviour with a carrier density of 0.27 cm2 V−1 s−1 and ON/OFF ratio of about 4 × 103. The photoresponsivity of the phototransistor could reach up to 0.98 A W−1 with a light intensity of 0.56 mW cm−2, suggesting that ReS2 is a promising material for electronic and optoelectronic applications.