Issue 28, 2017

Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions

Abstract

During the past few years, two-dimensional (2D) layered materials have emerged as the most fundamental building blocks of a wide variety of optoelectronic devices. The weak van der Waals (vdW) interlayer forces allow the 2D monolayers to isolate and restack into arbitrary stacking heterojunctions. The recently developed chemical vapor deposition (CVD) technique shows great promise for the production of large domain building blocks of 2D heterostructures with vertical and lateral stacking and much better device performance. This review is the first of its kind to discuss the research progress of flexible FETs based on graphene/semiconductor heterostructures, in which graphene acts as both electrode and semiconductor material.

Graphical abstract: Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions

Article information

Article type
Review Article
Submitted
02 Dec 2016
Accepted
07 Mar 2017
First published
20 Mar 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 17387-17397

Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions

Z. Zhu, I. Murtaza, H. Meng and W. Huang, RSC Adv., 2017, 7, 17387 DOI: 10.1039/C6RA27674A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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