Issue 9, 2017, Issue in Progress

Thermal oxidative etching method derived graphitic C3N4: highly efficient metal-free catalyst in the selective epoxidation of styrene

Abstract

A series of g-C3N4 nanosheets were synthesized by thermal oxidation with long time heating and etching. With an increase in heating time from 1.0 to 3.0 h, the g-C3N4 nanosheet was obtained with a thinner layer thickness, larger BET surface area and higher graphic nitrogen ratio. As a metal-free heterogeneous catalyst, the g-C3N4 NS-3 h nanosheets show a superior catalytic performance for the epoxidation of styrene to styrene oxide than that of the bulk g-C3N4 and other recently reported metal-free materials. The higher activity of the g-C3N4 NS-3 h synthesized by long time thermal oxidative etching might be ascribed to the enlarged specific surface, pore volume and higher graphic nitrogen ratio with the loose and soft laminar morphology. The graphitic nitrogen species play a key role in the catalytic reaction based on a good linear correlation between the content of these species and the activity results. The g-C3N4 nanosheets are very stable and can be reused 5 times without obvious loss of catalytic activity.

Graphical abstract: Thermal oxidative etching method derived graphitic C3N4: highly efficient metal-free catalyst in the selective epoxidation of styrene

Supplementary files

Article information

Article type
Paper
Submitted
01 Nov 2016
Accepted
13 Nov 2016
First published
17 Jan 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 5340-5348

Thermal oxidative etching method derived graphitic C3N4: highly efficient metal-free catalyst in the selective epoxidation of styrene

J. Ren, X. Liu, L. Zhang, Q. Liu, R. Gao and W. Dai, RSC Adv., 2017, 7, 5340 DOI: 10.1039/C6RA26137J

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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