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Issue 2, 2017
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Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

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Abstract

Uniform deposition of high-k dielectrics on two-dimensional (2D) crystals is highly desirable for their use in future nano-electronic devices. Here, the surface coverage of the Al2O3 films grown by atomic layer deposition (ALD) was investigated on mechanically-exfoliated MoS2, WS2, WSe2, and h-BN flakes for exploring the deposition kinetics of the Al2O3 films on the 2D crystals. The film coverage followed a decreasing order of WSe2 > WS2 > MoS2 > h-BN, which was mainly determined by the ALD temperature and adsorption energy (Eads) of the ALD precursor (trimethyl-aluminum) during the initial ALD cycles. The obtained |Eads| values of the precursor on the 2D crystals corresponded well to a van der Waals physisorption energy of 0.05–0.26 eV. Furthermore, the magnitude of the extracted Eads values showed a strong dependence on the induced dipole polarizability of the 2D crystals. The obtained results demonstrate that the surface coverage of the ALD high-k dielectrics can be modulated by choosing the types of the 2D substrates, and could provide a pathway for the integration of high-k dielectrics in 2D crystal-based nano-electronic devices.

Graphical abstract: Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

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Supplementary files

Article information


Submitted
04 Oct 2016
Accepted
07 Nov 2016
First published
04 Jan 2017

This article is Open Access

RSC Adv., 2017,7, 884-889
Article type
Paper

Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

T. Park, H. Kim, M. Leem, W. Ahn, S. Choi, J. Kim, J. Uh, K. Kwon, S. Jeong, S. Park, Y. Kim and H. Kim, RSC Adv., 2017, 7, 884
DOI: 10.1039/C6RA24733D

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    [Original citation] - Published by The Royal Society of Chemistry.

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