Issue 41, 2017

Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

Abstract

Graphene, a two-dimensional material with a honeycomb lattice, has been promoted as a next generation material because of its ultrafast charge carriers and superior electrical properties. Hexagonal boron nitride (h-BN) is an insulator explored as an ideal substrate for graphene with lattice-matching. Using raido-frequency (RF) transmission measurement which provides specific characteristics of carrier scattering in a device, we profoundly investigated the electrical properties of quasi-free standing graphene on h-BN. RF devices with graphene supported and encapsulated with h-BN were fabricated to analyze the RF signal at low temperatures from 100 to 300 K. We demonstrated the carrier behavior in graphene with thermally excited carriers and acoustic photon scattering according to heat energy. Both h-BN supported and encapsulated graphene showed a significant enhancement in RF transmission, which is close to a gold interconnector. Our device with graphene on h-BN exhibited concealed nonlinear characteristics at a specific temperature of 180 K due to the internal effects of acoustic phonon scattering, while a usual device with graphene on SiO2/Si provided a linear variation. To anticipate the potential for electronic applications, the electrical circuit properties such as impedance, resistance, and inductance were extracted from the results of RF measurement.

Graphical abstract: Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

Supplementary files

Article information

Article type
Paper
Submitted
24 Jun 2017
Accepted
13 Sep 2017
First published
14 Sep 2017

Nanoscale, 2017,9, 15934-15944

Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

S. J. Kim, B. Park, S. H. Noh, H. S. Yoon, J. Oh, S. Yoo, K. Kang, B. Han and S. C. Jun, Nanoscale, 2017, 9, 15934 DOI: 10.1039/C7NR04571A

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