Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

Junyoung Kwon; Jong-Young Lee; Young-Jun Yu; Chul-Ho Lee; Xu Cui; James Hone; Gwan-Hyoung Lee

doi:10.1039/C7NR01501A

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Thickness-dependent Schottky barrier height of MoS₂ field-effect transistors†

Junyoung Kwon,‡^a Jong-Young Lee,‡^a Young-Jun Yu,^b Chul-Ho Lee,^c Xu Cui,^d James Hone^d and Gwan-Hyoung Lee

*^a

Author affiliations

* Corresponding authors

^a Department of Materials Science and Engineering, Yonsei University, Seoul, Korea
E-mail: gwanlee@yonsei.ac.kr

^b Materials & Components Basic Research Group, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea

^c KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea

^d Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA

Abstract

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS₂-metal contacts decreases with the thickness of MoS₂. We obtained a Schottky barrier height as low as about 70 meV when MoS₂ is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS₂.

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Article information

DOI: https://doi.org/10.1039/C7NR01501A
Article type: Paper
Submitted: 02 Mar 2017
Accepted: 10 Apr 2017
First published: 12 Apr 2017

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Nanoscale, 2017,9, 6151-6157

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Thickness-dependent Schottky barrier height of MoS₂ field-effect transistors

J. Kwon, J. Lee, Y. Yu, C. Lee, X. Cui, J. Hone and G. Lee, Nanoscale, 2017, 9, 6151 DOI: 10.1039/C7NR01501A

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