Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 5, 2017
Previous Article Next Article

Nanoplasmonically-engineered random lasing in organic semiconductor thin films

Author affiliations

Abstract

We demonstrate plasmonically nano-engineered coherent random lasing and stimulated emission enhancement in a hybrid gain medium of organic semiconductors doped with core–shell plasmonic nanoparticles. The gain medium is composed of a 300 ± 2 nm thin waveguide of an organic semiconductor, doped with 53 nm gold nanoparticle cores, isolated within silica shells. Upon loading the nanoparticles, the threshold of amplified spontaneous emission is reduced from 1.75 μJ cm−2 × 102 for an undoped gain medium, to 0.35 μJ cm−2 × 102 for a highly concentrated gain medium, and lasing spikes narrower than 0.1 nm are obtained. Most importantly, selection of silica shells with thicknesses of 10, 17 and 21 nm enables engineering of the plasmon–exciton energy coupling and consequently tuning of the laser slope efficiency. With this approach, the slope efficiency is increased by two times by decreasing the silica shell from 21 nm down to 10 nm, due to the enhancement of the localized electric field.

Graphical abstract: Nanoplasmonically-engineered random lasing in organic semiconductor thin films

Back to tab navigation

Article information


Submitted
16 Apr 2017
Accepted
09 Jun 2017
First published
09 Jun 2017

Nanoscale Horiz., 2017,2, 261-266
Article type
Communication

Nanoplasmonically-engineered random lasing in organic semiconductor thin films

E. Heydari, I. Pastoriza-Santos, L. M. Liz-Marzán and J. Stumpe, Nanoscale Horiz., 2017, 2, 261
DOI: 10.1039/C7NH00054E

Social activity

Search articles by author

Spotlight

Advertisements