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Issue 13, 2017
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Recent progress in van der Waals heterojunctions

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Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.

Graphical abstract: Recent progress in van der Waals heterojunctions

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The article was received on 05 Feb 2017, accepted on 28 Feb 2017 and first published on 01 Mar 2017

Article type: Review Article
DOI: 10.1039/C7NR00844A
Citation: Nanoscale, 2017,9, 4324-4365

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    Recent progress in van der Waals heterojunctions

    W. Xia, L. Dai, P. Yu, X. Tong, W. Song, G. Zhang and Z. Wang, Nanoscale, 2017, 9, 4324
    DOI: 10.1039/C7NR00844A

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