Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 27th March 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 16, 2017
Previous Article Next Article

Extreme ultraviolet resist materials for sub-7 nm patterning

Author affiliations

Abstract

Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

Graphical abstract: Extreme ultraviolet resist materials for sub-7 nm patterning

Back to tab navigation

Publication details

The article was received on 31 Jan 2017 and first published on 26 Jun 2017


Article type: Tutorial Review
DOI: 10.1039/C7CS00080D
Citation: Chem. Soc. Rev., 2017,46, 4855-4866

  •   Request permissions

    Extreme ultraviolet resist materials for sub-7 nm patterning

    L. Li, X. Liu, S. Pal, S. Wang, C. K. Ober and E. P. Giannelis, Chem. Soc. Rev., 2017, 46, 4855
    DOI: 10.1039/C7CS00080D

Search articles by author

Spotlight

Advertisements