Solvent-gated thin-film-transistors

Abstract

Electrical double layer (EDL) thin film transistors (TFTs) are an interesting class of transistors that use an electrolyte as the gating medium. Recently it has been demonstrated that pure organic solvents can also be used as gating media for TFTs without the addition of exogenous electrolytes. Here we present a systematic study of the performances of TFTs based on two different semiconductors (P3HT and ZnO) gated through nine different solvents either pure or loaded with NaCl. The nature of the solvent impacts the transfer characteristics of the TFT through a change in the gating capacitance while the threshold voltage remains unaffected. Depending on the polarity of solvents, addition of NaCl gives rise to different responses. TFTs gated through highly polar solvents are unaffected by the salt concentration while for low polarity solvents the output current increases with salt up to a plateau. Furthermore, when the semiconductor surface is covered with a high capacitance thin dielectric layer, the TFT output current becomes dependent on the NaCl concentration also for high polarity solvents. This phenomenology was rationalized considering the different contributions of Helmholtz and Guy-Chapman EDLs to the capacitance and the dielectric saturation that decreases the solvent dielectric constant within the Helmholtz EDL.